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Shenzhen Fuchao Technology
| Model： | 2N7002EY |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Anbon Semiconductor |
| Description： | N-CHANNEL SMD M |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
Quantity
Price
Total Price
1
$0.1400
$0.1400
10
$0.1000
$1.0000
100
$0.0500
$5.0000
500
$0.0400
$20.0000
1000
$0.0300
$30.0000
3000
$0.0200
$60.0000
6000
$0.0200
$120.0000
9000
$0.0200
$180.0000
30000
$0.0200
$600.0000
75000
$0.0200
$1,500.0000
150000
$0.0100
$1,500.0000
| TYPE | DESCRIPTION |
| Mfr | Anbon Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340mA (Ta) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 300mA, 10V |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18 pF @ 30 V |
